Composite of Au nanoparticles and molecularly imprinted polymer as a sensing material

A molecularly imprinted polymer with immobilized Au nanoparticles (Au-MIP) is reported as a novel type of sensing material. The sensing mechanism is based upon the variable proximity of the Au nanoparticles immobilized in the imprinted polymer, which exhibits selective binding of a given analyte accompanied by swelling that causes a blue-shift in the plasmon absorption band of the immobilized Au nanoparticles. Using adrenaline as the model analyte, it was shown that molecular imprinting effectively enhanced the sensitivity and selectivity, and accordingly, Au-MIP selectively detects the analyte at 5 microM. The combination of molecular imprinting and the Au nanoparticle-based sensing system was shown to be a general strategy for constructing sensing materials in a tailor-made fashion due to wide applicability of the imprinting technique and the independence of the sensing mechanism from the analyte recognition system.     

Defect levels in chromium-doped silicon

The transient capacitance technique has been used to study the chromium-related levels in the silicon band gap. Chromium was diffused at temperature of 1100 and 1150°C for 0.5 and 3 hr. Five different levels at E_c?0.11 eV, E_c?0.21 eV, E_c?0.28 eV, E_c?0.36 eV and E_c?0.45 eV were obtained from the Arrheniu plots of the electron thermal-emission rates. The number of levels in the upper half of the band gap decreased from five to two with an increase of Cr-diffusion period. Two levels were located at E_c?0.20 eV (donor) and E_c?0.43 eV (acceptor). A donor level was also observed at E_v + 0.25 eV. The donor level was not affected by the diffusion condition. The majority carrier capture cross sections of the three dominant levels have been measured by the transient capacitance technique modified by the pulse transformer. The values were σ_n = 4.1 × 10^?15 cm² for the upper donor at E_c?0.20 eV, σ_n = 2.0 × 10^?16 cm² for the acceptor at E_c ?0.43 eV and σ_p = 9.1 × 10^?18 cm² for the lower donor at E_v + 0.25 eV, and were independent of temperature. The three dominant levels are due to distinct chromium centers.     

Photocatalytic degradation of trichloroethylene in water using TiO2 pellets

A recirculating system of aqueous trichloroethylene (TCE) solutions through the packed bed reactor with TiO2 pellets has been developed in order to mineralize TCE without difficulties for filtration and recovery of catalyst. The TiO2 pellets prepared by sol gel method have photocatalytic activity similar to commercially available PC-101 and PC-102 in the powder form and to ST-B11 pellets. In batch experiments with TiO2 powders, Degussa P-25 is the most active photocatalyst, which indicates that specific surface area is not an important factor controlling the photocatalytic activity in aqueous solutions. The degradation rates of TCE in the recirculating system with TiO2 pellets decreased in the presence of H2O2, while were remarkably accelerated by adding S2O8(2-). The presence of S2O8(2-) ions more than 0.01 mol dm(-3) completely suppressed hole-electron recombination and mineralized 50 ppm TCE with the 2 h irradiation. In a reactor without TiO2 photocatalysts, TCE was photodegraded by SO4- radicals which produced by photodissociation of S2O8(2-). The degradation rates increased with increase of the initial S2O8(2-) concentration. However, TCE was not mineralized but converted to intermediates which were slowly degraded to Cl- by continuing the irradiation.     

Compensation of Interchannel Crosstalk Induced by Optical Fiber Nonlinearity in Carrier Phase-Locked WDM System

A scheme that compensates the waveform distortion induced by nonlinear interchannel crosstalk such as four-wave mixing (FWM) and cross-phase modulation as well as self-phase modulation in phase-locked wavelength-division-multiplexing transmission systems is proposed. Reduction of FWM-induced waveform distortion by controlling the phase relationship between neighbouring channels and its cancellation by precompensation is successfully demonstrated     

A Passive UHF RF Identification CMOS Tag IC Using Ferroelectric RAM in 0.35-μm Technology

A passive UHF RF identification (RFID) tag IC with embedded 2-KB ferroelectric RAM (FeRAM) for rewritable applications enables a 2.9 times faster read-and-write transaction time over EEPROM-based tag ICs. The resulting FeRAM-based tag has a nominally identical communication range for both read and write operations, which is indispensable for data write applications. The evaluated tag communication range with a folded dipole antenna is from 0 m to 4.3 m, at the 953-MHz carrier frequency with 4-W transmitting Effective Isotropic Radiated Power (EIRP) from a reader/writer. The developed tag IC features two circuit blocks to maximize the communication range in 0.35-mum CMOS/FeRAM technology. First is a CMOS-only full-wave rectifier, which can improve the measured efficiency by up to 36.6% by reducing the input parasitic capacitances and optimization of multiplier structure. This efficiency is more than twice that of previously-published results. Second is a low-voltage current-mode ASK demodulator to accommodate a low-breakdown voltage of FeRAM, which converts the ASK power modulation into a linearly modulated current over an incoming power range of 27 dB, corresponding to the entire communication range. The developed demodulator can thus resolve the primary design tradeoff issue between device protection and detection sensitivity in the conventional voltage-mode demodulator     

Wide-wavelength tunable lasers with 100 ghz fsr ring resonators

A widely tunable laser, consisting of a 100 GHz FSR triple-ring resonator and a semiconductor optical amplifier, is presented. The 100 GHz FSR ring resonator makes it possible to demonstrate 96 nm wavelength tuning with stable single-mode operation produced by a large threshold gain difference     

Synthesis and characterization of K2NiF4-type CaLnCoO4 (Ln = Sm and Gd)

K₂NiF₄-type CaLnCoO₄ (Ln = Sm and Gd) has been synthesized at 1173 or 1223 K in air using citric acid (CA) and ethylene glycol (EG). CaLnCoO₄ (Ln = Sm and Gd) has an orthorhombic structure with the space group Bmab. The average particle sizes are approximately 300 nm for CaSmCoO₄ and approximately 170 nm for CaGdCoO₄, respectively. The global instability index (GII) indicates that the crystal structure of CaGdCoO₄ is more stable than that of CaSmCoO₄. CaLnCoO₄ (Ln = Sm and Gd) is a p-type semiconductor and shows paramagnetic behavior above 5 K. The 1/χ-T curve of CaSmCoO₄ deviates from the Curie-Weiss law, whereas the 1/χ-T curve of CaGdCoO₄ follows the Curie-Weiss law in the temperature range of 5 ≤ T ≤ 300 K. From the values of the observed effective magnetic moment (μ_eff) of CaLnCoO₄ (Ln = Sm and Gd), it is considered that the spin state of the Co³⁺ ion is low.     

Self-dissolving micropile array tips for percutaneous administration of insulin

Two kinds of insulin were loaded into self-dissolving micropile array tip (following tip). Fully-loaded tip (f-tip) and partially-loaded tip (p-tip) were prepared using chondroitin sulfate for the percutaneous administration of insulin. One hundred micropiles were constructed on a 1.0 × 1.0 cm tip. The mean length of the micropile in a tip were 483.4 ± 4.7 μm for the f-tip and 492.6 ± 2.4 μm for the p-tip. The insulin content of the p-tip was 28.5% of that of the f-tip. The pharmacological efficiency of insulin loaded tip was evaluated in rat experiments by measuring their hypoglycemic effects. The maximum hypoglycemic effect of insulin was observed at 1.7 ± 0.2 h for the f-tip and 1.5 ± 0.2 h for the p-tip. Good dose-dependency was observed for the plasma glucose level vs. time curves. These results suggest the usefulness of p-tip as a percutaneous DDS of insulin.     

Long-span optical FSK heterodyne single-filter detection transmission experiment using a phase-tunable DFB laser diode

High receiver sensitivity (?51.9 dBm) and long span (243 km) transmission expriments have been achieved with a 140 Mbit/s optical FSK heterodyne single-filter detection system, using a phase-tunable DFB laser diode as a transmitter. This has enabled direct FSK modulation without waveform distortion. Also, a 280 Mbit/s 204 km transmission experiment has been carried out successfully.     

Valence Band Structure of ZnO (1010) Surface by Cluster Calculation

Discrete variational (DV) Xα cluster method has been employed in calculating electronic structures of ZnO. Electronic structures of the bulk and the non-polar surface model clusters are calculated with inclusion of electrostatic potentials in the bulk and near the surface, and the electronic origins of experimental spectra and chemical bonds at the surface are examined in detail. The valence band structure constructed by Zn-3d and O-2p bands is much influenced by electrostatic potentials in ZnO. It is found that the reduction of an electrostatic potential near the surface gives rise to the difference of the valence band structures between in the bulk and at the surface. The calculated density of states at the non-polar surface of ZnO, where the Zn-3d and O-2p bands are more widely separated than in the bulk, is in good agreement with the experimental UPS. In addition, a Zn-O bond at the surface is found to show stronger covalency than that in the bulk, as a result of the change of the valence band structure due to the effect of the electrostatic potential.